Abstract

The (1 0 0) oriented LaNiO 3 (LNO) films with different thickness were prepared on SiO 2/Si substrate by a modified metallorganic decomposition process. PbZr 0.53Ti 0.47O 3 (PZT) films (∼1 μm) subsequently deposited on LNO by modified sol–gel process. The X-ray diffraction measurements show PZT films exhibit a single perovskite phase with (1 0 0) preferred orientation. α 1 0 0 >94% can be obtained for PZT deposited on LNO bottom electrode with thickness greater than 60 nm. SEM measurements show the PZT films have a columnar structure. The LNO thickness effect on P r, E c, and dielectric constant were investigated and showed that the thickness of the LNO bottom electrode caused drastic changes in P r, dielectric constant and dielectric loss. Sub-switching fields dependence of permittivity were investigated for PZT films and showed that both reverible and irreversible component of the permittivity increase with the thickness of LNO electrode.

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