Abstract
Strontium titanate (SrTiO3), a typical wide-band-gap perovskite oxide, is a promising candidate for the application of thin film transistor (TFT). In this paper, the LaxSr1-xTiO3 thin films with different doping concentration are fabricated by sol–gel method. X-ray diffraction (XRD), scanning electron microscope (SEM), atomic force microscope (AFM), UV–Vis-NIR transmission spectroscopy and four point probe instrument are employed to characterize the crystal structure, surface profile, transmittance and resistivity of LaxSr1-xTiO3 thin films. The results show that LaxSr1-xTiO3 (x=0.5at.%, 1at.%, 1.5at.%, 2at.%, 4at.%, 6at.%, 8at.%, 10at.%) thin films are single SrTiO3 cubic phase after La doping. Additionally, the SEM and AFM observation reveal dense grains and smooth surface. LaxSr1-xTiO3 film possesses high transmittance in visible region. The conductivity of LaxSr1-xTiO3 thin films is improved tremendously after La doping. The resistivity of La0.04Sr0.96TiO3 is 11.7×10−3Ω·cm and its transmittance is 88.66%.
Published Version
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