Abstract
A novel method of metal-organic chemical vapor deposition (MOCVD) Pb(Zr,Ti)O3 (PZT) has been developed for use in high-density ferroelectric memory device. Well-aligned polycrystalline PZT films were grown onto Iridium bottom electrode by the MOCVD method with tmhd-family precursors in octane-based solvent under oxygen atmosphere at 550°C. Moreover, crystallinity of the PZT films on Ir bottom electrode was improved dramatically by inserting TiAlN barrier layer. It is also investigated the Iridium bottom electrode effect on the PZT in the ways of roughness, grain size, remnant polarization, fatigue and retention properties. Resultantly, highly reliable (111)-oriented PZT capacitors were obtained with 2Pr of 45 μC/cm2 and Vc of 0.8 V through MOCVD method and the interface engineering of the Iridium bottom electrode.
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