The effect of incident cluster ion energy and size on secondary ion yields emitted from Si

Abstract

Secondary ions produced from a Si target bombarded with Ar cluster ions much larger than the molecular ions have been investigated. Secondary ions have been measured for a Si target bombarded with large Ar cluster ions at an incident energy between 7.5 and 27.5keV using a time-of-flight technique. The mean size of the Ar cluster ion was about 1000atoms/cluster, and then the collision energy per atom is between a few tens of eV and a few hundreds of eV. Secondary silicon cluster ions were detected under large Ar cluster ion bombardment. In this study, we succeeded to accurately measure the dependence of secondary ion spectra obtained by large Ar cluster ions on the incident cluster-ion size using a time-of-flight technique combined a primary-ion beam deflector and a secondary-ion deflector. The dependence of the secondary ion spectra under large Ar cluster ion bombardment on the incident cluster size is discussed.