Abstract
The influance of deformation conditions on intensity different lines of dislocation luminescence spectra in silicon has been discovered. Comparison of these data with the results on the annealing ESR signal showes that short wavelength part of the spectrum is connected with fresh dislocations , while long wavelength part is corresponded to electron transitions with participation of either reconstructed or decorated dislocations. In this model the change of luminescence spectrum under hydrogenation is discussed.
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