Abstract
Strontium titanate thin films have been prepared on p-type Si(100) substrates by radio frequency (rf) magnetron sputtering. The films were deposited at 400 °C and annealed at various temperatures. The thin films were polycrystalline and the crystallinity of films was increased by annealing. The SrTiO3 thin films were composed of three regions; an external surface layer, a main layer, and an interface layer. The composition and the width of the interface layer were not changed by annealing below 600 °C. The composition ratio of films, as analyzed by the Rutherford backscattering technique, was 1, 1.1, and 3 for Sr, Ti, and O, respectively. The electrical properties of SrTiO3 films were dramatically controlled by annealing. The SrTiO3 film annealed at 600 °C had ideal capacitance-voltage characteristics and maximum effective dielectric constant.
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