Abstract
Abstract Lead titanate (PbTiO3) thin films have been prepared on titanium dioxide coated silicon wafers by chemical vapor deposition (CVD). The pure PbTiO3 thin films were deposited by controlling the experimental conditions. The gas phase reaction of TiO2 occurred by exceeding the critical value of titanium input fraction at constant oxygen partial pressure. Strontium titanate (SrTiO3) thin films have been prepared on p-type silicon wafers by radio frequency (RF) magnetron sputtering. The SrTiO3 thin film was polycrystalline and the Sr/Ti ratio of this film was 0.91. The SrTiO3 thin films contain three regions, an external surface layer, a main layer and an interfacial layer. The stoichiometric SrTiO3 thin film was obtained by using the SrO excess target. The SrTiO3 film annealed at 600[ddot]C has an ideal capacitance-voltage (C-V) curve and maximum effective dielectric constant.
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