The Effect of H-Implantation Energy on the Annealing Kinetics of Germanium Surface Blistering

Abstract

The impact of implantation energy on hydrogen-induced blistering in germanium is investigated. The results demonstrated that the kinetic plots (shown in Figure 1) were not only shifted through translation with the variation of H-implanted energy but also a break point occurred for H-implanted Ge with a low energy or low dose in the plot, which is a straight line accorfing to the Arrhenius formula. The dynamic plots of Ge blistering after a H-implanted Ge wafer were modified into a single straight-line with increasing H implantation energy similar to the fluence increasing. The characterizations of the cross-section transmission electron microscopy (XTEM) indicated that <001> H-platelets parallel to germanium surface played a main role in the subsequent exfoliation. According to the observation of optical microscopy for different H implantation fluences (shown in Figure 2) and the analysis of the critical statistic dimension (i.e. broken blisters) (shown in Figure 3), we propose a model (shown in Figure 4) that can reasonably explain the critical dimension variation with H-implantation energy even though the same dimension <001> H-platelets is viewed. Figure 1