The Annealing Kinetic Study on Germanium Surface Blistering by Hydrogen Implantation

Abstract

The annealing blistering after hydrogen implantation is a fundamental to achieve GeOI (germanium-on-insulator) by the well-known Smart-cut process. The impacts of H implantation dose and energy on the annealing kinetic plots are studied. The experimental results indicated: (1) the implantation with low dose or energy results in Arrhenius plot with a break point that separate the plot into two regions due to different activation energy; (2) the situation of the kinked kinetic plot, high and low temperature corresponding to high and low activation energy, is against that for other known materials; (3) the unitary activation energy occurs as either implantation dose or energy is enhanced. Moreover, the critical size to form craters increases with the rise of either dose or energy in H-implanted Ge. The variation of the kinetic plot may be related to the different desorption energy from the diverse types of H-platelets with distinct bind energy in germanium.