Abstract
Chalcopyrite compounds of copper indium gallium diselenide (CIGS) absorber were fabricated by using binary-particle (, , and ) precursors with thermal sintering method. The binary-particle ink was firstly prepared by milling technology and then printed onto a soda lime glass substrate, which was baked at a low temperature to remove solvents and form a dry precursor. Following milling, the average particle size of agglomerated CIGS powder is smaller than 1.1 μm. Crystallographic, stoichiometric, and electrical properties of precursor CIGS films with various doping amounts of had been widely investigated by using thermal sintering in a nonvacuum environment without selenization. Analytical results reveal that the CIGS absorption layer prepared with a doping ratio of 3 has a chalcopyrite structure and favorable composition. The mole ratio of Cu : In : Ga : Se of this sample was 1.03 : 0.49 : 0.54 : 1.94, and related ratios of Ga/(In
Highlights
Chalcopyrite compounds of copper indium gallium diselenide (CIGS) and related alloys are among the most promising materials for photovoltaic applications [1]
The X-ray diffractometry (XRD) measurement was executed by scanning the diffraction angle from 20 to 60∘ and using a grazing incidence angle of 1∘
A CIGS absorber prepared by using binaryparticle (Cu2Se, In2Se3, Ga2Se3) precursors via thermal sintering method had widely been investigated
Summary
Chalcopyrite compounds of copper indium gallium diselenide (CIGS) and related alloys are among the most promising materials for photovoltaic applications [1]. Industrial production of CIGS solar cell is mostly based on vacuum processes, which depends on a high initial investment in manufacturing machines These low-cost techniques typically involve the use of simple and fast nonvacuum deposition methods and the molecular prefixing of the film composition in a precursor layer, which is chemically and thermally treated to form a high-quality CIGS film. A nearly carbon-free CIGS film can be obtained by applying a three-step heat treatment process: the first step is the elimination of carbon residues by air annealing, the second step is the formation of CIGS alloys by sulfurization, and the third step is the grain growth and the densification of CIGS films by selenization This work proposes another process to fabricate a CIGS absorption layer by using binary-particle precursors, such as Cu2Se, In2Se3, and Ga2Se3, through thermal sintering. An optimized doping amount of the Ga2Se3 for forming CuIn0.5Ga0.5Se2.0 absorption layers could be obtained
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