Abstract
Single crystals of internally oxidized copper-silicon alloys were deformed by cold rolling and the changes occurring on annealing at 700°C have been followed by hardness testing and optical and electron microscopy. It was found that the dispersed phase could either cause an acceleration or retardation of recrystallization depending upon the interparticle spacing. Nucleation rate and growth rate of recrystallization nuclei are affected by comparable amounts with change of interparticle spacing and not a retardation of nucleation rate alone as observed in aluminium alloys.
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