Abstract
Plasma oxidation of silicon offers advantages over conventional thermal oxidation in that it is a low temperature (<500°C) method of thin film production which takes place in a clean vacuum environment. The growth rate and also the electrical properties of the oxides are a strong function of the plasma input power, pressure and system geometry. In this paper the effect of these discharge conditions on oxide growth rate, electrical breakdown strength and oxide interface charge levels is presented. By optimisation of the discharge conditions and by suitable temperature annealing, device quality oxides have been produced which have oxide interface charge levels in the range 10 10–10 11 cm 2 and electrical breakdown strengths in excess of 10 MV cm −1.
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