Abstract
The effect of dc bias voltage on the microstructure of bias-enhanced diamond nucleation layer is systematically investigated by using high resolution cross-sectional transmission electron microscopy and X-ray photoelectron spectroscopy. It is revealed that the formation of epitaxial β-SiC phase on a silicon substrate at −200 V is responsible for maintaining the heteroepitaxial relation between the diamond film and the silicon substrate. On the other hand, amorphous nucleation layers are detected on bias-treated silicon substrate at higher dc voltages, which prevent the deposited diamond films from having the orientation of a silicon substrate. Based on the experimental results, the variation of microstructure in the bias-enhanced diamond nucleation layer with respect to the amount of dc voltage is intensively discussed. In addition, a mechanism for the formation and growth of epitaxial β-SiC phase during bias treatment is proposed. © 2001 The Electrochemical Society. All rights reserved.
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