Abstract
The nature and the effect of crystal defects on the performance of GaAs/GaAlAs solar cells fabricated by MOCVD production reactors have been evaluated. Intrinsic threading dislocations from the GaAs substrates propagate through the junction and are believed to act as recombination centers reducing both the short circuit current density and the open circuit voltage of the device. These defects, at a concentration level exceeding 2 × 104 cm−2, detrimentally affect the electrical performance of the solar cells.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
