Abstract
In this paper, we present GaAs solar cells on Si substrate by direct epitaxial growth of III–V layers on Si substrate. Fabricated solar cells have shown relatively high energy conversion efficiency of 11.17% without anti reflection coating. By analyzing external quantum efficiency, dark I–V characteristics, and photo luminescence spectra, we have found that possible defect state near the band edge strongly impact on the performance of GaAs solar cell on Si and termination of these defects will further improve the performance of GaAs solar cell directly grown on Si substrates.
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