Abstract
Ba 0.6Sr 0.4TiO 3 (BST) dielectric thin films doped by Cr were prepared using an alkoxide-based sol–gel method on the Pt/Ti/SiO 2/Si substrate. Atomic force microscopy and X-ray diffraction analysis showed that increasing the Cr-doping ratio causes increased grain size while the surface remains smooth and crack-free. It was also found that compared with undoped films the increase of Cr content in BST improves the dielectric constant and the leakage-current characteristics. The figure of merit reached the maximum value of 72.3 at the 5 mol% of Cr doping. This composition showed the dielectric constant of 426, the loss factor of 0.0065, tenability of 47.7%, and leakage-current density (at the electric field of 100 kV/cm) of 5.31×10 −8 A/cm 2. The results show that the Cr-doped BST thin films are prospective candidates for applications in tunable devices.
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