Abstract
Introduction: Nowadays, a resistive switching memory using biological, transparent, and environmentally friendly materials is appreciated as the tendency of science and technology, especially in the field of electronic devices. Chitosan (CS), having dominant characteristics such as non-toxic, biocompatible and large capacity, plays as a switching medium in resistive random access memory devices (RRAM).
 Methods: In our study, CS film was fabricated onto a commercial substrate (FTO) using a simple spin coating method, and the top electrode (Ag) was deposited by a direct-current sputtering technique.
 Results: The Ag/CS/FTO devices shown the bipolar switching behavior when applying sequence voltage from -1.5 to 2V with the set process in the negative bias and the reset process in the positive bias. The content (0.2, 0.5, and 0.8 wt%) and thickness (100, 300, 500 nm) of chitosan film significantly affect the resistive switching performance. The devices with 0.5 wt%/v concentration and 300 nm-thickness of CS have shown better efficiency than the others with endurance over 100 sweeping cycles and ON/OFF ratio at ca. 2x10 times.
 Conclusions: It is found that the chitosan material has a large potential candidate for applications in optoelectronic devices.
Highlights
Nowadays, a resistive switching memory using biological, transparent, and environmentally friendly materials is appreciated as the tendency of science and technology, especially in the field of electronic devices
A device of fullerene-derivative [6,6]-phenyl-C61 butyric acid methyl ester mixed with inert polystyrene matrix has the threshold switching voltage and ON/OFF state current ratio depending on the film thickness 13
We can observe clearly that the interface position between fabricated onto a commercial substrate (FTO) substrate and CS thin film is coated evenly with around 300 nm thickness. This result is in good agreement with X-ray diffractometer (XRD) records with an amorphous state of CS thin film
Summary
A resistive switching memory using biological, transparent, and environmentally friendly materials is appreciated as the tendency of science and technology, especially in the field of electronic devices. Chitosan (CS), having dominant characteristics such as non-toxic, biocompatible and large capacity, plays as a switching medium in resistive random access memory devices (RRAM). Chitosan (CS), one of the potential biopolymer materials, has been promoted researches to apply in many areas because of its highlight characteristics such as non-toxic, environmentally friendly, and large capacity [1,2]. Chitosan has been employed as an insulator layer in resistive switching memory devices. The thickness of inorganic thin films influence on the resistive switching performance of Gd2O3 17, AlN 18, amorphous BaTiO3 11 From these reports, it is learned that the thickness of the insulator layer plays an important role in resistive switching characteristics and behaviors. The investigations related to thickness influence are not comprehensive understanding, especially on biopolymer
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