The Effect of Circuit Parameters on Reverse Biased Safe Operating Area of SiC MOSFET

Abstract

In recent years, silicon carbide (SiC) and other wide band gap semiconductors have become one of the strategic commanding heights in the global high-technology field. Silicon Carbide (SiC) metal-oxide-semiconductor field effect transistor (MOSFET) has shown excellent electrical properties. When applying SiC MOSFET, the safe operation area (SOA) need to be considered. In this paper, the effect of circuit parameters on RBSOA of SiC MOSFET is researched. Firstly, the principle of RBSOA is introduced. Secondly, the equivalent circuit of the single-pulse test circuit is shown to study on the effect of gate resistance and gate voltage on RBSOA. Thirdly, the simulation of variable parameters are done to research the variation trend. Finally, experiments are done to verify the results which can make an important influence on safe operation of SiC MOSFET and help choose suitable circuit parameters.