Abstract
We report the results of a study of voltage-current characteristics of gallium arsenide metal-semiconductor Schottky barrier structures, in which palladium and W-Ni alloy were electrochemically deposited in SiO2 windows to form the barrier. It is demonstrated that the voltage-current characteristics are significantly distorted at low temperatures. The observed behavior of the voltage-current characteristics at low temperatures —the appearance of excess current and the increase in the ideality factor with carrier concentration in the excess current regime —is explained by a model in which peripheral mechanical stresses in the contacts lower the potential barrier height on the periphery of the contacts.
Published Version
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