Abstract
The effect of bandgap engineering on I C -V BE flyback characteristic of power SiGe heterojunction bipolar transistor is studied through theoretical analysis, computer simulations, and experimental measurements. It is found that because of the existence of Ge composition, SiGe Heterojunction Bipolar Transistors have better thermal stability compared with homojunction bipolar transistors under the same operating condition which will be beneficial to decrease the emitter ballast resistance of HBT and improve the performance of transistor. And the greater Ge composition is, the more stable the HBT is.
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