Abstract
The effect of atmosphere on the sintering of nano-crystalline α-silicon carbide, doped with boron carbide and carbon, and prepared by attrition milling, has been studied under vacuum, argon and nitrogen atmospheres between 2000° and 2100°C. It has been found that the sintering atmosphere has a very critical influence on the sintering of silicon carbide. Sintering in vacuum provides maximum theoretical density, whereas the nitrogen atmosphere has a retarding effect and does not yield full densification. Argon atmosphere takes an intermediate role in the sintering process. The results have been explained in terms of a diffusion model.
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