Abstract
Silicon carbide was chemically deposited on the (111) surface of silicon single crystal and isotropic pyrolytic graphite by using methyltrichlorosilane as source gas. The deposits were examined by X-ray diffractometry and electron scanning microscopy (SEM) and found to be composed of β-SiC, free Si and a trace of 2H-SiC. The coatings yielded the less free silicon in it using graphite as substrate and at a higher argon flow rate. X-ray analysis indicated that the degree of preferred orientation varied with the kinds of substrate materials and the amount of argon added.
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