Abstract
Silicon Carbide (SiC) and Silicon Carbide with free Silicon [SiC(Si)] thin films were prepared by chemical vapor deposition (CVD) using an CH3SiCl3-H2-Ar gas mixture at temperatures of 1173 to 1323 K. The structure of these films were investigated by scanning electron microscopy (SEM) and X-ray diffractometry (XRD). The effects of crystallinity, morphology and Si-concentration of the deposits were examinated in some detail.
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