Abstract
Density of states which is an important parameter for the carrier statistics study of Trilayer Graphene Nanoribbon with ABA stacking is modeled in this paper. Analytical model for the density of states of ABA trilayer graphene nanoribbon is proposed and a numerical solution is obtained. In addition, applied voltage effect on carrier effective mass is simulated. The simulation results indicate that by increasing the applied voltage, the carrier effective mass (m?) increases and thus to obtain equal number of electrons and holes, the location of the intrinsic Fermi level will be moved far from the band gap centre.
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