Abstract
The effect of annealing and oxygen plasma on the electrical characteristics of gallium oxide films has been investigated. Ga2O3 films with thicknesses of 200–300 nm were formed by the anodic oxidation of n-GaAs wafers with the donor concentration Nd = (1–2) × 1016 cm−3. It is shown that, after annealing at 900°C for 30 min, the gallium arsenide films contain only the β Ga2O3 phase. The effect of the duration of oxygen plasma treatment prior to annealing on the nucleation of β-phase crystallites with different orientations has been studied. It has been established that the electrical conductivity of the Ga2O3 films can be managed by annealing and variation in the duration of oxygen plasma treatment. It is shown that the response of the V/Ni-GaAs-Ga2O3-V/Ni structure to a mixture exhaled by a person depends on the value and sign of the potential on the control electrode.
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