Chemical bonding, optical constants, and electrical resistivity of sputter-deposited gallium oxide thin films

Abstract

Gallium oxide (Ga2O3) thin films were made by sputter deposition employing a Ga2O3 ceramic target for sputtering. The depositions were made over a wide range of substrate temperatures (Ts), from 25 to 600 °C. The effect of Ts on the chemical bonding, surface morphological characteristics, optical constants, and electrical properties of the grown films was evaluated using X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), spectroscopic ellipsometry (SE), and four-point probe measurements. XPS analyses indicate the binding energies (BE) of the Ga 2p doublet, i.e., the Ga 2p3/2 and Ga 2p1/2 peaks, are located at 1118.0 and 1145.0 eV, respectively, characterizing gallium in its highest chemical oxidation state (Ga3+) in the grown films. The core level XPS spectra of O 1s indicate that the peak is centered at a BE ∼ 531 eV, which is also characteristic of Ga-O bonds in the Ga2O3 phase. The granular morphology of the nanocrystalline Ga2O3 films was evident from AFM measurements, which also indicate that the surface roughness of the films increases from 0.5 nm to 3.0 nm with increasing Ts. The SE analyses indicate that the index of refraction (n) of Ga2O3 films increases with increasing Ts due to improved structural quality and packing density of the films. The n(λ) of all the Ga2O3 films follows the Cauchy's dispersion relation. The room temperature electrical resistivity was high (∼200 Ω-cm) for amorphous Ga2O3 films grown at Ts = RT-300 °C and decreased to ∼1 Ω-cm for nanocrystalline Ga2O3 films grown at Ts ≥ 500–600 °C. A correlation between growth conditions, microstructure, optical constants, and electrical properties of Ga2O3 films is derived.