Abstract
We have studied the Er and ErSi2 contacts on p-Si. A correlation is found between the barrier height and the presence of an interfacial oxide layer. Samples with a thin interfacial oxide (∼ 3 Å) exhibit a barrier height of 0.68 eV. In contrast, samples without any detectable interfacial oxide show a higher barrier height of ∼0.8 eV. The barrier heights were determined by current-voltage measurements and the thicknesses of the interfacial oxide were measured by the 16O(d,α)14 N nuclear reaction technique.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
