Abstract
The integration process, low- k hybrid-organic-siloxane-polymers (HOSP) and photoresist stripping process have been investigated. The dielectric properties of HOSP films are degradated after photoresist removal. This is because photoresist stripping processes destroy the functional groups and induce moisture uptake in HOSP films. In this study, NH 3-plasma treatment was used for HOSP films to form a thin nitrogen-containing layer, preventing HOSP films from O 2 plasma ashing and chemical wet stripper damage during photoresist removal. The leakage current is decreased significantly and the dielectric constant is maintained at a low value after photoresist removal. These experimental results show that NH 3 treatment is a promising technique to enhance the resistance of HOSP films to the photoresist stripping process.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
