Abstract
The growth of diamond films by chemical vapour deposition (CVD) method is a current topic of great attention because of many potentially attractive applications. One of the many critical issues that have yet to be solved is full understanding of the nucleation behaviour on non-diamond substrates [1]. In general, the nucleation density of diamond is enhanced by abrading the substrate surface with diamond powder, or less commonly, and other selected hard materials such as c-BN, SiC, A1203, etc. [2]. The effectiveness of diamond abrasion in enhancing the nucleation density has been mainly attributed to the plantation of diamond seeds or formation of surface defects [3]. The "diamond seeds" hypothesis has direct experimental evidence [4], unlike the "surface defects" hypothesis [3]. Iijima et al. [4] showed by high resolution-transmission electron microscopy (HR-TEM) that diamond seeds were embedded in an Si wafer surface by diamond abrasion and they homoepitaxially grew during deposition.
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