Abstract
AbstractThe effect of a magnetic field on the hydrogenic shallow donor impurity is investigated with the use of a variational method. Two different expressions describing the photoionization cross‐section for donor‐conduction band transitions are obtained both in absence and presence of an applied strong magnetic field. The effect of the strong magnetic field is well observed in a semiconducting material of high dielectric constant and low effective mass such as germanium. It has been found that the photoionization cross‐section is strongly affected by the magnetic field.
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