The dynamic characteristics of sulfur sensitization centers in T-grain AgBrI microcrystals

Abstract

The microwave absorption dielectric-spectrum technique was used to study the decay kinetics of the free photoelectrons and shallow-trapped electrons in the sulfur-sensitized T-grain AgBrI crystals prepared under different sensitization times. It was found that, from the dependence of the kinetic behavior of photoelectrons in the sensitized T-grain AgBrI emulsions, the optimal sensitization time was 45min. With an increase of the sensitization time, the trap effect of the sulfur sensitization centers varies from the hole trap to shallow electron trap, and to deep electron trap, corresponding to the sulfur sensitization centers in the forms of a monomer, dimmer, and cluster of Ag2S, respectively. The range of the shallow electron trap depth traps was determined to be 0.26–0.27eV.