The drain threshold voltage VTd in submicrometer MOS transistors at 4.2 K

Abstract

In this paper a set of experimental results of the so-called drain threshold voltage V/sub Td/, and its impact on the electrical performance of submicrometer MOS transistors, are presented. This effect is more pronounced when the device is operated in a cryogenic ambient. Therefore, by reducing the temperature down to 4.2 K, the V/sub Td/ mechanism, which is not visible at room temperature, is amplified and more easily related to the negative overlapping source-gate length (-/spl Delta/L). In this way it is found that the devices with a larger V/sub Td/ are the ones with a more negative /spl Delta/L, showing that the V/sub Td/ and the -/spl Delta/L are correlated and have the same physical origin. Moreover, it is suspected that the reverse short-channel effect (RSCE) might be also correlated to the V/sub Td/ effect.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>