Abstract
The effects of indium and boron interaction in the channel region on device performance have been investigated. The two main areas of focus are the impact of replacing boron with indium as the channel and pocket implants. These are assessed based on the experimental results of short channel effects (SCE) and reverse short channel effects (RSCE). SCE and RSCE are significantly improved by integrating high-dose boron pocket and low indium implant energy, respectively. Experiments done using an indium pocket show severe degradation in SCE control, possibly due to poor activation of the indium dopant. Last, significant improvement in reverse narrow channel effects has been demonstrated by indium channel narrow devices. All experimental data are supported with process and device simulation results using TSUPREM4 and MEDICI, respectively. This allows a correlation between the channel-doping profile and the electrical data. © 2002 The Electrochemical Society. All rights reserved.
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