The drain-bias-variable characteristics of exponent γon l/fγ noise in DDD n-MOSFETs at 77 K and 300 K

Abstract

The flicker noise (1 / f γ ) of short-channel MOSFETs measured under different drain bias conditions at 77K and 300K will be presented in this paper, i.e., the drain bias and temperature dependences of the exponent γ on 1 / f r noise in DDD n-MOSFETs were studied in the ohmic region. The results showed that γ in the drain-to-source voltage noise spectrum S Vd, were increased significantly with V ds for L= 1.2 μm at 77K and 300K. In other channel lengths, such as L= 1.6, 2.0, and 5.0 μm, constant values of γ in the noise spectrum S v were observed. The threshold voltage V th decreased notably with V ds for L= 1.2 μm samples at 77K and 300K. These phenomena imply that the threshold voltage shift has predominant effect on the exponent γ of the S vd flicker noise as the drain voltage and temperature varies.