The domain structure and local switching of LiNbO3 thin films deposited on Si(001) by radio-frequency magnetron sputtering

Abstract

Ferroelectric domain structure and local switching were studied in LiNbO3 thin films deposited by radio-frequency magnetron sputtering technique on Si (001) substrates in Ar and Ar(60%)+O2(40%) environments. The noticeable difference in surface morphology and ferroelectric domain structure of the investigated films was found. The films sintered in pure Ar environment demonstrated pronounced <0001> texture; nevertheless, neither piezoresponse nor ferroelectric domains were obtained. Films sintered in Ar(60%)+O2(40%) environment possessed the switchable ferroelectric domain structure but disordered grain orientation. The films sintered in Ar after thermal annealing in air preserve <0001> texture and possess self-poled switchable domain structure.