Abstract
In semi-insulating GaAs the deep double donor EL2 compensates the net acceptor concentration N A - N D. Inhomogeneities in the electrical properties of wafers could in principle be due to fluctuations of the total EL2 concentration, or the net acceptor concentration, or both. The situation can be clarified by mapping the distribution of both charge states (EL2 0 and EL2 +) of the EL2. Two methods are presented: magnetic circular dichroism and near infrared absorption at different wavelengths. Results show that, contrary to statements found in the literature, the total EL2 concentration shows the familiar fourfold symmetry on 100 wafers, and that it accumulates in the cell walls of the dislocation network.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
