Abstract
Abstract The dislocation structure in polycrystalline Ni3Ge deformed at room temperature has been studied transmission electron microscopy. The structure consists mainly of screw 〈110〉 dislocations and superlattice intrinsic stacking fault (SISF)-coupled partial dislocations. A few dislocations are present as antiphase boundary (APB)-coupled partials. Two kinds of SISF partial dislocation are observed: SISF pairs with dissimilar Burgers vectors and SISF pairs with antiparallel Burgers vectors. The energies of the APBs on {111} and {001} planes have been estimated to be 169 and 148 mJ m−2 respectively, and the SISF energy has been measured to be between 15 and 30 mJ m−2. Dissimilar SISF partials appeared to be formed the dissociation of a segment of a segment of a perfect dislocation, confirming a mechanism for SISF formation first suggested by Pak, Saburi and Nenno in 1976. Anomalous yield stress behaviour in the low-temperature region (below room temperature) is attributed mainly to mechanism(s) based on...
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