Abstract
Lithium tantalate, which has chemical formula of LiTaO3, thin films have been grown on a p-type Si substrate (100) by using chemical solution deposition and spin coating techniques at speed of 3000 rpm for 30 seconds. LiTaO3 thin films were made in concentration of 2.5 M and at annealing temperatures of 550°C, 600°C, 650°C, 700°C, 750°C, and 800°C. The purpose of this study determines the diffusion coefficient of lithium tantalate (LiTaO3) above the silicon substrate (100) on the p-type annealing temperature of 550°C, 600°C, 650°C, 700°C, 750°C and 800°C. These thin films were characterized by using LCR meter. The electrical conductivity values of LiTaO3 films were in the range of 10-6 - 10-5 S/cm, where the higher the electrical conductivity, the higher the light intensity. This indicates that the LiTaO3 films was a semiconductor material. In addition, the higher the energy that moves the particles leads to the faster the diffusion. The diffusion coefficients of Li-TaO3 films were in the range of 57 - 391 nm2/s.
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