Abstract
Lithium tantalate, which has chemical formula of LiTaO3, thin films have been grown on a p-type Si substrate (100) by using chemical solution deposition and spin coating techniques at speed of 3000 rpm for 30 seconds . LiTaO3 thin films were made in concentration of 2.5M and at annealing temperatures of 550 °C, 600 °C, 650 °C, 700 °C, 750 °C, and 800 °C. These thin films were characterized by using ocean optic spectroscopy and LCR meter. The results showed that the highest absorbance peak of LiTaO3 films was at temperature of 800 °C with wavelengths above 800 nm. This indicates that the LiTaO3 films was a semiconductor material.
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