The Diffusion Coefficient of Germanium in Silicon

Abstract

The germanium diffusion coefficients in Si and SiO2 are investigated by the use of secondary ion mass spectrometry (SIMS). The diffusion profiles are discussed in detail to obtain precise diffusion coefficients. The germanium diffusion coefficients in Si and SiO2 are measured as D = 7.55 × 103 exp (−5.08 eV/kT) cm2/s and D ≈ 8.9 × 10−3 exp (−3.9 eV/kT) cm2/s, respectively. Not only the activation energy but also the germanium diffusion coefficient in Si are very close to those of the Si self-diffusion.