Abstract
The dielectrically isolated high voltage IC technology was investigated. The diode structure with n+ buried layer as a channel stopper can achieve a high breakdown voltage for the same oxide thickness as compared with a conventional structure. The relations between diode parameters and the breakdown voltage were investigated and a control technique for the fixed charge density was applied to obtain the high voltage device. The dependence of the device characteristics on positions in the IC was studied and it was found that current gain of lateral pnp transisters depended on the positions significantly. The high voltage crossunder interconnection structure utilizing the n+ buried layer was developed. Using all these techniques, a 250 V analog IC and 350 V switching ICs for telecommunication were fabricated.
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