Abstract

Shunt defects are often detected in solar panels intended for photovoltaic applications. However, existing nondestructive detection technologies have certain inherent drawbacks depending on the application scenario. In this context, this paper reports a comprehensive empirical investigation into lock-in thermography (LIT) and its applicability to diagnosing shunt defects in copper indium gallium selenide (CIGS) solar modules. LIT was compared with biased thermography, and its distinctive attributes were elucidated. The comparison results demonstrate the superior capabilities of LIT at enhancing the signal-to-noise ratio, improving the visibility, resolution, and quantification of defects, and highlighting the usefulness of LIT for advanced defect analysis. We explored scenarios in which biased thermography could be appropriate despite its inherent limitations and identified conditions under which it might be preferred. The complex thermal behavior of different types of defects under various voltage conditions was analyzed, contributing to a more nuanced understanding of their behavior. Thus, integrating experimental results and theoretical understanding, we provide valuable insights and scientific guidelines for photovoltaic research. Our findings could help enhance the efficiency of defect detection in CIGS modules, highlighting the critical role of optimized thermographic techniques in developing photovoltaic technologies.

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