The Development of the Charge Transport Model To Predict Dielectric Failure

Abstract

A charge transport model was previously developed in our group to predict intrinsic dielectric failure as a function of voltage for low-k SiCOH and high-k SiN, two materials commonly used in integrated circuits[1], [2]. The model incorporates a set of fundamental mechanisms, including electronical conduction and defect generation, resulting in breakdown when a critical defect density is reached. It replicated electrical conduction through dielectric materials and so can describe the entire history of current flow through the dielectric. Furthermore, a revised version of this model was recently proposed, and it overcame two limitations of the original model: the lack of thickness and temperature dependence. One issue recently investigated was the assumption that the effective velocity of tunneling electrons was the same as mobile electrons. These velocities are used to calculate the electron flux/current. New models separating the two velocities were developed and to fit the experimental data. These newer models offered slightly worse reliability predictions, and so the initial assumption remains not only simpler, but also more accurate so far. This model will be applied to predict the filament formation in resistive switching memory devices.