Abstract
This work is concerned with the development of “cermet” film resistors prepared by deposition in vacuum. Cermets are metal/metal oxide/insulator mixtures having resistivities many times that of conventional deposited resistive materials. The preparation of samples of thickness 500 nm having resistivities ranging from 1 kΩ/sq. to 1 MΩ/sq. is described, attention is directed towards a two-boat evaporation system, and also to an electron beam source. The properties of the samples are discussed, in particular both their long- and short-term stability, their conduction mechanisms, and methods of adjusting the temperature coefficient of resistance; final values being obtained between 0 and +30 ppm/°C, by a vacuum annealing process. The principal cermet studied is a chromium/silicon oxide system, but a brief mention is made of other interesting systems.
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