Abstract
A vanadium oxide fabrication method using a magnetron sputtering method and a vacuum annealing process was adopted. The control parameters of magnetron sputtering and vacuum annealing processes were optimized to achievea highly reproducible VO2 thin film. The preparation reduces the experimental requirements for the accuracy of the instrument and significantly increases the success rate of the experiment. By adjusting the annealing temperature to change the composition of the film, the resulting films under different annealing conditions were tested by SEM and temperature transition. Studies have shown that through the optimization of the control parameters of the two processes of magnetron sputtering and vacuum annealing process, the preparation of highly reproducible VO2 thin film is realized; the uniformity of the thin film composition is greatly improved when the annealing temperature is 733K to The VO2 thin film with good phase change performance can be formed in the 763K interval. The resistance change of the VO2 thin film is about 5 × l04 times to 1.2 × 104 times before and after the resistance mutation. The crystal structure on the surface of the thin film is the best and the cell size is uniform.
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