The Development of a New Piezoresistive Pressure Sensor for Low Pressures

Abstract

This paper presents the design methodology and fabrication process of a novel piezoresistive pressure sensor with a combined cross-beam membrane and peninsula (CBMP) diaphragm structure for micropressure measurements. The sensor is then analyzed through various experiments. The sensor is primarily designed based on the optimized sensitivity, and a finite-element method is used to predict the stresses that are induced in the piezoresistors and the deflection of the membrane under different pressures. Compared to other traditional diaphragm types, a significant increase in sensitivity can be achieved by the proposed sensor, and the membrane deflection and nonlinearity error considerably decrease. The sensor fabrication process is performed on an n-type single-crystal silicon wafer, and photolithography is used with five masks to fabricate the sensing elements. Additionally, piezoresistors are formed by boron implantation. The experimental results indicate that the fabricated sensor with the CBMP membrane yields a high sensitivity of 25.7 mV/kPa and a low nonlinearity of −0.28% full-scale span for a pressure range of 0–5 kPa at room temperature.