Abstract
To meet the radiosonde requirement of high sensitivity and linearity, this study designs and implements a monolithically integrated array-type piezoresistive intelligent pressure sensor system which is made up of two groups of four pressure sensors with the pressure range of 0–50 kPa and 0–100 kPa respectively. First, theoretical models and ANSYS (version 14.5, Canonsburg, PA, USA) finite element method (FEM) are adopted to optimize the parameters of array sensor structure. Combing with FEM stress distribution results, the size and material characteristics of the array-type sensor are determined according to the analysis of the sensitivity and the ratio of signal to noise (SNR). Based on the optimized parameters, the manufacture and packaging of array-type sensor chips are then realized by using the standard complementary metal-oxide-semiconductor (CMOS) and microelectromechanical system (MEMS) process. Furthermore, an intelligent acquisition and processing system for pressure and temperature signals is achieved. The S3C2440A microprocessor (Samsung, Seoul, Korea) is regarded as the core part which can be applied to collect and process data. In particular, digital signal storage, display and transmission are realized by the application of a graphical user interface (GUI) written in QT/E. Besides, for the sake of compensating the temperature drift and nonlinear error, the data fusion technique is proposed based on a wavelet neural network improved by genetic algorithm (GA-WNN) for average measuring signal. The GA-WNN model is implemented in hardware by using a S3C2440A microprocessor. Finally, the results of calibration and test experiments achieved with the temperature ranges from −20 to 20 °C show that: (1) the nonlinear error and the sensitivity of the array-type pressure sensor are 8330 × 10−4 and 0.052 mV/V/kPa in the range of 0–50 kPa, respectively; (2) the nonlinear error and the sensitivity are 8129 × 10−4 and 0.020 mV/V/kPa in the range of 50–100 kPa, respectively; (3) the overall error of the intelligent pressure sensor system is maintained at ±0.252% within the hybrid composite range (0–100 kPa). The involved results indicate that the developed array-type composite pressure sensor has good performance, which can provide a useful reference for the development of multi-range MEMS piezoresistive pressure sensor.
Highlights
To date, microelectromechanical system (MEMS) silicon piezoresistive pressure sensors have been used in a diverse range of commercial and engineering applications including consumer, automobiles, process control, biomedicine, military, meteorology, and aerospace industry areas, and their measurement range and accuracy have been greatly expanded and improved [1,2,3,4,5,6]
In order to obtain high-performance array-type piezoresistive pressure sensors based on silicon on insulator (SOI) for radiosonde measurements of pressure, we investigate the design, optimization modeling, fabrication, measurement and temperature drift and nonlinear error compensation of the monolithically integrated MEMS pressure sensor array taking into account the balance between the low voltage noise and the high sensitivity as well as high linearity
To effectively solve the problem of the difference in radiosonde measurement accuracy over the entire pressure range (0–100 kPa), we propose a novel idea of using the monolithically integrated array-type composite sensor to measure the pressure in the range of 0–50 kPa and 50–100 kPa, respectively
Summary
Microelectromechanical system (MEMS) silicon piezoresistive pressure sensors have been used in a diverse range of commercial and engineering applications including consumer, automobiles, process control, biomedicine, military, meteorology, and aerospace industry areas, and their measurement range and accuracy have been greatly expanded and improved [1,2,3,4,5,6]. According to the above literatures, we can see that the current sensor array is mainly used for sensing stress or pressure distribution, an exhaustive analysis considering the influences of doping concentration and the geometry of piezoresistors on optimizing the performance of the monolithically integrated array-type composite pressure sensor with repeating units for averaging measurements in terms of sensitivity, linearity as well as signal-to-noise ratio (SNR) has been rarely reported till now. In order to obtain high-performance array-type piezoresistive pressure sensors based on silicon on insulator (SOI) for radiosonde measurements of pressure, we investigate the design, optimization modeling, fabrication, measurement and temperature drift and nonlinear error compensation of the monolithically integrated MEMS pressure sensor array taking into account the balance between the low voltage noise and the high sensitivity as well as high linearity. Design Optimization of the Array-Type Piezoresistive Pressure Sensor and Basic Theory
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