Abstract

A method is presented that allows the simultaneous direct determination of the lattice parameter a 0 and the strains of stressed thin films, independently of an unstressed reference sample with the same value of a 0. The method employs a thin film Guinier camera in subtracting backscattering geometry using Seemann-Bohlin focusing. A wide range of diffraction angles is covered. The strain is measured over a range of angles, not just normal to the layer. Applications of the method to evaporated silver, gold, Nb 3Ge, niobium and vanadium films are presented.

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