Abstract
The polishing pads, as an important consumable in chemical mechanical polishing (CMP), play a key role of transporting slurry to wafer surface, carrying away the polishing waste and simultaneously exerting pressure and shear force on the wafer surface, which contact directly with the wafer. This paper, the three-dimensional white light interference (WLI) non-contact surface topography instrument and scanning electron microscopy (SEM) are used to observe the physical morphology changes of the pad, and energy-dispersive X-ray spectroscopy (EDS) is used for the pad compositional analysis. Attenuated total reflectance Fourier Transform Infrared (ATR/FTIR) method is found to provide an opportunity for the surface analysis of pad materials. Through these methods, we explored the deterioration mechanism of the pad. The results show the quantity of the active site of the pad is the critical factor influencing the material removal rate and roughness of fused silica. The less the quantity of active site is, the rougher surface and lower material removal rate fused silica will be in CMP process.
Published Version
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