Abstract
Abstract Neutron irradiation of doped gallium arsenide leads to an increase in the width of the infrared absorption line associated with localized vibrations of SiGa donors. This effect is attributed to the presence of strain around the disordered regions associated with primary collisions. The strain anneals at temperatures above 250°C. The limitations of this optical probing technique are discussed and a comparison is made with earlier work on neutron irradiated silicon host crystals.
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